1/10 advanced data january 2003 stp22nm60 - STP22NM60FP stb22nm60 - stb22nm60-1 n-channel 600v - 0.19 w - 22a to-220/fp/d 2 pak/i 2 pak mdmesh?power mosfet (1)i sd 22a, di/dt 400a/s, v dd v (br)dss ,t j t jmax. (*)limited only by maximum temperature allowed 1 2 3 1 3 1 2 3 to-220 to-220fp i 2 pak d 2 pak 1 2 3 n typical r ds (on) = 0.19 w n high dv/dt and avalanche capabilities n 100% avalanche tested n low input capacitance and gate charge n low gate input resistance description this improved version of mdmesh? which is based on multiple drain process represents the new bench- mark in high voltage mosfets. the resulting product exhibits even lower on-resistance, impressively high dv/dt and excellent avalanche characteristics. the adoption of the companys proprietary strip technique yields overall performances that are significantly better than that of similar competitions products. applications the mdmesh? family is very suitable for increasing power density of high voltage converters allowing sys- tem miniaturization and higher efficiencies. absolute maximum ratings (?)pulse width limited by safe operating area type v dss r ds(on) r ds(on) *q g i d stp22nm60 STP22NM60FP stb22nm60 stb22nm60-1 600 v 600 v 600 v 600 v < 0.25 w < 0.25 w < 0.25 w < 0.25 w 7.6 w *nc 7.6 w *nc 7.6 w *nc 7.6 w *nc 22 a 22 a 22 a 22 a symbol parameter value unit stp(b)22nm60(-1) STP22NM60FP v ds drain-source voltage (v gs =0) 600 v v dgr drain-gate voltage (r gs =20k w ) 600 v v gs gate- source voltage 30 v i d drain current (continuous) at t c = 25c 22 22 (*) a i d drain current (continuous) at t c = 100c 12.6 12.6 (*) a i dm ( l ) drain current (pulsed) 80 80(*) a p tot total dissipation at t c = 25c 192 45 w derating factor 1.2 0.36 w/c dv/dt(1) peak diode recovery voltage slope 15 v/ns v iso insulation winthstand voltage (dc) -- 2500 v t stg storage temperature C65 to 150 c t j max. operating junction temperature 150 c i nternal schematic diagram
stp22nm60 / STP22NM60FP / stb22nm60 / stb22nm60-1 2/10 thermal data avalanche characteristics electrical characteristics (t case = 25 c unless otherwise specified) off on (1) dynamic 1. pulsed: pulse duration = 300 s, duty cycle 1.5 %. 2. c oss eq. is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss . to-220/d 2 pak/i 2 pa k to-220fp rthj-case thermal resistance junction-case max 0.65 2.8 c/w rthj-amb thermal resistance junction-ambient max 62.5 c/w t l maximum lead temperature for soldering purpose 300 c symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 11 a e as single pulse avalanche energy (starting t j = 25 c, i d =i ar ,v dd =50v) 650 mj symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 600 v i dss zero gate voltage drain current (v gs =0) v ds = max rating 1a v ds = max rating, t c = 125 c 10 a i gss gate-body leakage current (v ds =0) v gs = 30 v 100 na symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds =v gs ,i d = 250 a 345v r ds(on) static drain-source on resistance v gs =10v,i d = 11 a 0.19 0.25 w symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ds >i d(on) xr ds(on)max, i d =11a tbd s c iss input capacitance v ds =25v,f=1mhz,v gs =0 1590 pf c oss output capacitance 803 pf c rss reverse transfer capacitance 52 pf c oss eq. (2) equivalent output capacitance v gs =0v,v ds = 0v to 400v 130 pf r g gate input resistance f=1 mhz gate dc bias=0 test signal level=20mv open drain 1.6 w
3/10 stp22nm60 / STP22NM60FP / stb22nm60 / stb22nm60-1 electrical characteristics (continued) switching on switching off source drain diode note: 1. pulsed: pulse duration = 300 s, duty cycle 1.5 %. 2. pulse width limited by safe operating area. symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd =200v,i d =11a r g = 4.7 w v gs =10v (see test circuit, figure 3) 25 ns t r rise time 20 ns q g total gate charge v dd =400v,i d =22a, v gs =10v 40 71 nc q gs gate-source charge 11 nc q gd gate-drain charge 25 nc symbol parameter test conditions min. typ. max. unit t r(voff) off-voltage rise time v dd = 480 v, i d =22a, r g =4.7 w, v gs =10v (see test circuit, figure 5) 13 ns t f fall time 15 ns t c cross-over time 26 ns symbol parameter test conditions min. typ. max. unit i sd source-drain current 20 a i sdm (2) source-drain current (pulsed) 80 a v sd (1) forward on voltage i sd =22a,v gs =0 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 22 a, di/dt = 100 a/s, v dd =100v,t j =25c (see test circuit, figure 5) 416 5.6 27 ns c a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 22 a, di/dt = 100 a/s, v dd =100v,t j =150c (see test circuit, figure 5) 544 7.3 28 ns c a
stp22nm60 / STP22NM60FP / stb22nm60 / stb22nm60-1 4/10 fig. 5: test circuit for inductive load switching and diode recovery times fig. 4: gate charge test circuit fig. 2: unclamped inductive waveform fig. 1: unclamped inductive load test circuit fig. 3: switching times test circuits for resistive load
5/10 stp22nm60 / STP22NM60FP / stb22nm60 / stb22nm60-1 dim. mm inch min. typ. max. min. typ. max. a 4.40 4.60 0.173 0.181 c 1.23 1.32 0.048 0.051 d 2.40 2.72 0.094 0.107 d1 1.27 0.050 e 0.49 0.70 0.019 0.027 f 0.61 0.88 0.024 0.034 f1 1.14 1.70 0.044 0.067 f2 1.14 1.70 0.044 0.067 g 4.95 5.15 0.194 0.203 g1 2.4 2.7 0.094 0.106 h2 10.0 10.40 0.393 0.409 l2 16.4 0.645 l4 13.0 14.0 0.511 0.551 l5 2.65 2.95 0.104 0.116 l6 15.25 15.75 0.600 0.620 l7 6.2 6.6 0.244 0.260 l9 3.5 3.93 0.137 0.154 dia. 3.75 3.85 0.147 0.151 l6 a c d e d1 f g l7 l2 dia. f1 l5 l4 h2 l9 f2 g1 to-220 mechanical data p011c
stp22nm60 / STP22NM60FP / stb22nm60 / stb22nm60-1 6/10 dim. mm inch min. typ. max. min. typ. max. a 4.4 4.6 0.173 0.181 b 2.5 2.7 0.098 0.106 d 2.5 2.75 0.098 0.108 e 0.45 0.7 0.017 0.027 f 0.75 1 0.030 0.039 f1 1.15 1.7 0.045 0.067 f2 1.15 1.7 0.045 0.067 g 4.95 5.2 0.195 0.204 g1 2.4 2.7 0.094 0.106 h 10 10.4 0.393 0.409 l2 16 0.630 l3 28.6 30.6 1.126 1.204 l4 9.8 10.6 0.385 0.417 l6 15.9 16.4 0.626 0.645 l7 9 9.3 0.354 0.366 ? 3 3.2 0.118 0.126 l2 a b d e h g l6 f l3 g1 123 f2 f1 l7 l4 to-220fp mechanical data
7/10 stp22nm60 / STP22NM60FP / stb22nm60 / stb22nm60-1 dim. mm inch min. typ. max. min. typ. max. a 4.4 4.6 0.173 0.181 a1 2.49 2.69 0.098 0.106 b 0.7 0.93 0.027 0.036 b2 1.14 1.7 0.044 0.067 c 0.45 0.6 0.017 0.023 c2 1.23 1.36 0.048 0.053 d 8.95 9.35 0.352 0.368 e 2.4 2.7 0.094 0.106 e 10 10.4 0.393 0.409 l 13.1 13.6 0.515 0.531 l1 3.48 3.78 0.137 0.149 l2 1.27 1.4 0.050 0.055 l l1 b2 b d e a c2 c a1 l2 e p011p5/e to-262 (i 2 pak) mechanical data
stp22nm60 / STP22NM60FP / stb22nm60 / stb22nm60-1 8/10 1 dim. mm. inch min. typ max. min. typ. max. a 4.4 4.6 0.173 0.181 a1 2.49 2.69 0.098 0.106 a2 0.03 0.23 0.001 0.009 b 0.7 0.93 0.027 0.036 b2 1.14 1.7 0.044 0.067 c 0.45 0.6 0.017 0.023 c2 1.23 1.36 0.048 0.053 d 8.95 9.35 0.352 0.368 d1 8 0.315 e 10 10.4 0.393 e1 8.5 0.334 g 4.88 5.28 0.192 0.208 l 15 15.85 0.590 0.625 l2 1.27 1.4 0.050 0.055 l3 1.4 1.75 0.055 0.068 m 2.4 3.2 0.094 0.126 r 0.4 0.015 v2 0o 8o d 2 pak mechanical data 3
9/10 stp22nm60 / STP22NM60FP / stb22nm60 / stb22nm60-1 tape and reel shipment (suffix t4)* tube shipment (no suffix)* d 2 pak footprint * on sales type dim. mm inch min. max. min. max. a 330 12.992 b 1.5 0.059 c 12.8 13.2 0.504 0.520 d 20.2 0795 g 24.4 26.4 0.960 1.039 n 100 3.937 t 30.4 1.197 base qty bulk qty 1000 1000 reel mechanical data dim. mm inch min. max. min. max. a0 10.5 10.7 0.413 0.421 b0 15.7 15.9 0.618 0.626 d 1.5 1.6 0.059 0.063 d1 1.59 1.61 0.062 0.063 e 1.65 1.85 0.065 0.073 f 11.4 11.6 0.449 0.456 k0 4.8 5.0 0.189 0.197 p0 3.9 4.1 0.153 0.161 p1 11.9 12.1 0.468 0.476 p2 1.9 2.1 0.075 0.082 r 50 1.574 t 0.25 0.35 0.0098 0.0137 w 23.7 24.3 0.933 0.956 tape mechanical data
stp22nm60 / STP22NM60FP / stb22nm60 / stb22nm60-1 10/10 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no res ponsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result f rom its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specificati ons mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devi ces or systems without express written approval of stmicroelectronics. ? the st logo is a registered trademark of stmicroelectronics ? 2002 stmicroelectronics - printed in italy - all rights reserved stmicroelectronics group of companies australia - brazil - canada - china - finland - france - germany - hong kong - india - israel - italy - japan - malaysia - malt a - morocco singapore - spain - sweden - switzerland - united kingdom - united states. ? http://www.st.com
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